用於藍芽系統之高頻低雜訊放大器設計

Abstract

隨著互補式金氧半場效電晶體（CMOS）技術不斷改進，在無線接收端設計中，具有舉足輕重的影響力。本論文針對2.4GHZ藍芽系統(Bluetooth System)的運用，以.25um CMOS 製程從事射頻前端規格設計，根據藍芽系統動態範圍(Dynamic Rang, DR)的規範，低雜訊放大器（Low Noise Amplifier, LNA）被要求能切換於高增益與低增益兩種模式下。隨著輸入功率的不同而產生RSSI控制電壓來改變它的增益大小。本論文完成雙增益模式LNA設計，接收頻率2.4GHz，設計規格符合Bluetooth Radio規範。 雜訊參數(Noise Figure, NF)，增益(Gain)以及線性度(Linearity)對低雜訊放大器來說是很重要的三個參數。在本論文中針對各參數的最佳化，提出了單一(Monolithic)低雜訊放大器的設計。它是一個單一輸入╱輸出端點，兩級放大與雙增益模式之放大器。雙增益模式之低雜訊放大器已經由聯華電子 .25um CMOS 1P5M製程來完成驗證。

As CMOS technologies continuous to enjoy the benefits of aggressive scaling, they become increasingly attractive for use in wireless receivers. An RF front-end specification for 2.4GHz ISM band Bluetooth application had been evaluated and target to 0.25um CMOS technology, the LNA specifications had been achieved with the design features being considered to operate in both high gain and low gain mode in accordance with dynamic range regulations. Noise figure, gain and linearity are three important parameters in LNA design. This thesis proposed a monolithic LNA design toward optimization of all these design parameters, and that is a single-ended, two stages and dual-mode gain amplifier. Implementations of dual-gain mode LNA had been demonstrated with UMC 0.25um CMOS 1P5M technology.