Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xia, Zhen-Yuan | en_US |
dc.contributor.author | Xiao, Xiao | en_US |
dc.contributor.author | Su, Jian-Hua | en_US |
dc.contributor.author | Chang, Chi-Sheng | en_US |
dc.contributor.author | Chen, Chin H. | en_US |
dc.contributor.author | Li, Dan-Lin | en_US |
dc.contributor.author | Tian, He | en_US |
dc.date.accessioned | 2014-12-08T15:08:50Z | - |
dc.date.available | 2014-12-08T15:08:50Z | - |
dc.date.issued | 2009-09-01 | en_US |
dc.identifier.issn | 0379-6779 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.synthmet.2009.05.026 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6742 | - |
dc.description.abstract | Efficient orange-red phosphorescent organic light-emitting devices (PHOLED) with various doping concentrations of benzotriazole-iridium complex [(TBT)(2)Ir(acac)] (bis[4-(2H-benzotriazol-2-yl)-N,N-wdiphenyl-aniline-N(1),C(3)] iridium acetylacetonate) in 4,4'-N,N'-di(carbazolyl) biphenyl (CBP) host were fabricated. The sterically hindered iridium ligands alleviate self-quenching of the phosphorescence at high doping levels. Under the optimal doping concentration of 20 wt.%, the maximum external quantum efficiency (EQE), luminance and power yield reach 9.06%, 15.81 cd/A and 13.8 Im/W, respectively. Increasing the doping concentration from 5% to 30 wt.% significantly decreases the driving voltage. The driving voltage of 30% (TBT)(2)Ir(acac) doped device is only 3.16V at 1 mA/cm(2) with power yield of 13.32 lm/W. (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Orange-red phosphorescent OLED | en_US |
dc.subject | Benzotriazole derivative | en_US |
dc.subject | Iridium complex | en_US |
dc.title | Low driving voltage and efficient orange-red phosphorescent organic light-emitting devices based on a benzotriazole iridium complex | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.synthmet.2009.05.026 | en_US |
dc.identifier.journal | SYNTHETIC METALS | en_US |
dc.citation.volume | 159 | en_US |
dc.citation.issue | 17-18 | en_US |
dc.citation.spage | 1782 | en_US |
dc.citation.epage | 1785 | en_US |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000270641600016 | - |
dc.citation.woscount | 21 | - |
Appears in Collections: | Articles |
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