標題: The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
作者: Lin, Wei-Hsun
Chao, Kuang-Ping
Tseng, Chi-Che
Mai, Shu-Cheng
Lin, Shih-Yen
Wu, Meng-Chyi
光電工程學系
Department of Photonics
關鍵字: compressive strength;energy gap;gallium arsenide;III-V semiconductors;indium compounds;infrared detectors;photodetectors;semiconductor quantum dots
公開日期: 1-九月-2009
摘要: The influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 mu m is observed for the QDIP device. The results suggest that with the additional InGaAs-capped layer, the detection wavelengths of the InAs/GaAs QDIPs could be shifted to a longer-wavelength infrared range. A further increase in the In composition will not help to obtain an even longer-wavelength detection, which is attributed to the cancellation of a lower InGaAs state, and InAs-QD bandgap shrinkage resulted from the relaxed compressive strains of the InGaAs layer with a higher In composition.
URI: http://dx.doi.org/10.1063/1.3212983
http://hdl.handle.net/11536/6750
ISSN: 0021-8979
DOI: 10.1063/1.3212983
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 106
Issue: 5
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000269850300129.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。