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dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorChao, Kuang-Pingen_US
dc.contributor.authorTseng, Chi-Cheen_US
dc.contributor.authorMai, Shu-Chengen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:08:51Z-
dc.date.available2014-12-08T15:08:51Z-
dc.date.issued2009-09-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3212983en_US
dc.identifier.urihttp://hdl.handle.net/11536/6750-
dc.description.abstractThe influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 mu m is observed for the QDIP device. The results suggest that with the additional InGaAs-capped layer, the detection wavelengths of the InAs/GaAs QDIPs could be shifted to a longer-wavelength infrared range. A further increase in the In composition will not help to obtain an even longer-wavelength detection, which is attributed to the cancellation of a lower InGaAs state, and InAs-QD bandgap shrinkage resulted from the relaxed compressive strains of the InGaAs layer with a higher In composition.en_US
dc.language.isoen_USen_US
dc.subjectcompressive strengthen_US
dc.subjectenergy gapen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectinfrared detectorsen_US
dc.subjectphotodetectorsen_US
dc.subjectsemiconductor quantum dotsen_US
dc.titleThe influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3212983en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume106en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000269850300129-
dc.citation.woscount4-
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