標題: | Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire |
作者: | Ling, Shih-Chun Wang, Te-Chung Chen, Jun-Rong Liu, Po-Chun Ko, Tsung-Shine Chang, Bao-Yao Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Tsay, Jenq-Dar 光電工程學系 Department of Photonics |
關鍵字: | A-plane GaN;electroluminescence (EL);green light-emitting diodes (LEDs);polarization degree |
公開日期: | 15-八月-2009 |
摘要: | In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Omega as 20-mA injected current. Furthermore, the output power was 240 mu W at 100-mA drive current. |
URI: | http://dx.doi.org/10.1109/LPT.2009.2023234 http://hdl.handle.net/11536/6812 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2009.2023234 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 21 |
Issue: | 16 |
起始頁: | 1130 |
結束頁: | 1132 |
顯示於類別: | 期刊論文 |