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dc.contributor.authorTang, Jauen_US
dc.contributor.authorLee, Der-Hauen_US
dc.contributor.authorYeh, Yi-Cheunen_US
dc.contributor.authorYuan, Chi-Tsuen_US
dc.date.accessioned2014-12-08T15:08:57Z-
dc.date.available2014-12-08T15:08:57Z-
dc.date.issued2009-08-14en_US
dc.identifier.issn0021-9606en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3205406en_US
dc.identifier.urihttp://hdl.handle.net/11536/6816-
dc.description.abstractIn this work we analyzed the blinking statistics data of single CdSe/ZnS quantum dots at vey short times to test some predictions of the diffusion-controlled electron transfer (DCET) model. Using autocorrelation function (ACF) approach we could extract the exponent of the inverse power-law blinking statistics down to 1 mu s. Such an approach also minimizes human subjectivity in choosing a bin time and an on-off threshold. We showed that the observed stretched exponential decay in the ACF and its relationship to the blinking statistics are consistent with the DCET model, and we set an upper bound for the characteristic time constant t(c).en_US
dc.language.isoen_USen_US
dc.subjectcadmium compoundsen_US
dc.subjectdiffusionen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectsemiconductor quantum dotsen_US
dc.subjectzinc compoundsen_US
dc.titleShort-time power-law blinking statistics of single quantum dots and a test of the diffusion-controlled electron transfer modelen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3205406en_US
dc.identifier.journalJOURNAL OF CHEMICAL PHYSICSen_US
dc.citation.volume131en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000269060800027-
dc.citation.woscount3-
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