Photovoltaic effects in BiFeO(3)

doi:10.1063/1.3204695

Title:	Photovoltaic effects in BiFeO(3)
Authors:	Yang, S. Y. Martin, L. W. Byrnes, S. J. Conry, T. E. Basu, S. R. Paran, D. Reichertz, L. Ihlefeld, J. Adamo, C. Melville, A. Chu, Y. -H. Yang, C. -H. Musfeldt, J. L. Schlom, D. G. Ager, J. W., III Ramesh, R. 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	10-Aug-2009
Abstract:	We report a photovoltaic effect in ferroelectric BiFeO(3) thin films. The all-oxide heterostructures with SrRuO(3) bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages similar to 0.8-0.9 V and external quantum efficiencies up to similar to 10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO(3)/tin doped indium oxide interface.
URI:	http://dx.doi.org/10.1063/1.3204695 http://hdl.handle.net/11536/6822
ISSN:	0003-6951
DOI:	10.1063/1.3204695
Journal:	APPLIED PHYSICS LETTERS
Volume:	95
Issue:	6
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Appears in Collections:	Articles