标题: | 藉由晶圆接合和雷射剥离技术的搭配将氮化镓薄膜整合在铜或矽基板上 Integration of GaN Thin Film with Cu or Si Substrate by Wafer Bonding and Laser Lift-off |
作者: | 卢昶鸣 Chang Ming Lu 吴耀铨 Yewchung Sermon Wu 材料科学与工程学系 |
关键字: | 晶圆接合;雷射剥离基板;氮化镓发光二极体;氮化镓薄膜转移;铜基板;热应力和压应力;Wafer Bonding;Laser Lift-off;GaN LED;GaN film transfer;Copper substrate;Thermal and pressure stress |
公开日期: | 2001 |
摘要: | 由于缺乏大面积的氮化镓基板,氮化镓必须用异质磊晶的方式成长在其它基板上,而目前以蓝宝石为最常被使用的基板。不过蓝宝石基板在导电性质和导热性质上是较差的,这对于氮化镓发光元件之制作与表现给于诸多的难处和限制。幸运的是,透过晶圆接合与雷射剥离基板技术的搭配,可以把氮化镓薄膜转移到导电性质和导热性质较佳的铜基板或矽基板上。 然而在雷射剥离基板的制程中,因应而生的热应力和压应力却成为这个技术最大的挑战。在研究中发现影响薄膜转移的均匀性和完整性,最大的关键在于氮化镓薄膜与转移基板的接合界面上。因此先透过对于晶圆接合的研究,瞭解接合界面的接合机制对于雷射剥离制程的影响,并研究适当的接合技术使氮化镓薄膜与转移基板可以均匀而高强度的接合在一起。目前在我们的研究上已经可以很成功的将氮化镓薄膜均匀而完整的转移到铜基板上。如此便可以制作上下电极的发光二极体元件,让氮化镓发光二极体的制作简化、并增加发光面积、解决电流散开、使电性和发光效率都有明显的助益。此外可以用这个技术发展为以铜为基板的氮化镓雷射二极体、场发射电晶体和异直接面双极性电晶体,如此可以解决氮化镓高功率元件散热的问题,使元件的特性和表现更好。 Due to the lack of a bulk large area GaN substrate, GaN films are growth on other substrates by heteroeptaxial method. And up to now, sapphire is the most used growth substrate. However, sapphire is poor in electrical and thermal conductivity. This could make GaN-based optoelectronic devices difficult and restrict in fabrication and performance. Fortunately, we can transfer GaN films on other substrate that good in electrical and thermal conductivity such as copper or silicon substrate by wafer bonding and laser lift-off technology. However, large thermal and pressure stress would be a big problem during laser lift-off substrate process. In our study, the most influence in films transfer uniform and complete was the interface between GaN film and transfer substrate. So in our experimental will study wafer bonding technology to understand bonded mechanism and to make GaN films bond with transfer substrate uniformly and very strongly. Now, in our study can transfer GaN films on copper substrate very uniformly and completely. In this way, we can fabricate vertical GaN light emitted diode. And we can simplify the light emitted diode fabricate processes, add luminescence area, solve current spreading problem, improve electrical performance, and can get better luminescence efficiency. In addition, we can develop this technique in LD、FET、HBT with copper substrates. In this way we can solve heat sink problem in high power device and would be more useful and excellence in performance. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT900159026 http://hdl.handle.net/11536/68275 |
显示于类别: | Thesis |