完整後設資料紀錄
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dc.contributor.author江健榕en_US
dc.contributor.authorCheng-Jung Chiangen_US
dc.contributor.author孟心飛en_US
dc.contributor.authorHsin-Fei Mengen_US
dc.date.accessioned2014-12-12T02:27:25Z-
dc.date.available2014-12-12T02:27:25Z-
dc.date.issued2001en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT900198004en_US
dc.identifier.urihttp://hdl.handle.net/11536/68315-
dc.description.abstract共軛高分子是一種具有廣泛潛力應用在發光,顯示器,等各領域的材質.因為其可彎曲,製程優勢,因此引起科學家廣泛的研究.現在仍然面臨很多難題.其中之一就是電子傳導的困難,或是說電子的傳導能力比電洞差三個order. 此篇論文提出造成此現象的可能原因,並從能帶的觀點證明之.我也做了一些以此材料為主的發光二極體元件模擬,希望能預測一下未來這種裝置的物理現象.zh_TW
dc.description.abstractThe conjugated polymer has a great potential to be applied in light-emitting diode in the future because the low cost of processing and mechanical flexibility. But for now, it also has a well-known problem that is asymmetric in transport for electrons and holes. Researchers put every effort in vain to improve the mobility of electrons by purifying the sample as best as they can. We find that one of the natural qualities of PPV, it’s p-doped upon producing, might be the major reason that reduces the mobility of the electrons. I study this phenomenon from the energy band first, and then see how the traps will affect the transport from device simulation. Different electron-hole recombination regions with different trap density and applied bias are obtained from the simulation.en_US
dc.language.isoen_USen_US
dc.subject對苯乙烯zh_TW
dc.subject高分子發光二極體zh_TW
dc.subject元件模擬zh_TW
dc.subjectPPVen_US
dc.subjectDefectsen_US
dc.subjectPLED Device Simulationen_US
dc.subjectTrapsen_US
dc.title非完美對苯乙烯結構之能帶及高分子發光二極體的元件模擬zh_TW
dc.titleThe Band Structure of PPV with Defects and PLED Device Simulation with Traps.en_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
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