完整後設資料紀錄
DC 欄位語言
dc.contributor.author林立基en_US
dc.contributor.authorLi-Chi Linen_US
dc.contributor.author孟心飛en_US
dc.contributor.author施宙聰en_US
dc.contributor.author洪勝富en_US
dc.contributor.authorHsin-Fei Mengen_US
dc.contributor.authorJow-Tsong Shyen_US
dc.contributor.authorSheng-Fu Horngen_US
dc.date.accessioned2014-12-12T02:27:27Z-
dc.date.available2014-12-12T02:27:27Z-
dc.date.issued2001en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT900198010en_US
dc.identifier.urihttp://hdl.handle.net/11536/68320-
dc.description.abstract本實驗是以MEH-PPV為發光材料製作成發光二極體。實驗中分別以光激發與電激發來使樣品發光,比較在一樣的單重態激子濃度下兩種不同激發形式的三重態激子吸收改變率,藉由三重態激子吸收的改變率來得到三重態激子與單重態激子間的比例。這一個比例值在不同的電場下不是一個定值,隨著電場強度的增加,三重態激子與單重態激子的比例會變小,在低電場的區域,這一個比例值高於3,在高電場的區域,因為聲子瓶頸效應與電場拆解三重態激子的關係,使得這一個比例值在高電場的情況下比3小。zh_TW
dc.description.abstractWe use MEH-PPV as the material to fabricate the light –emitting-diode. Comparing the triplet induced-absorptions with optical and electric excitations at same singlet excition density is our main work to get the ratio. This ratio is not a fixed value under different electric fields. As the field’s intensity increases, the ratio will decrease. The ratio will be larger than 3 at intermediate field. While we apply the sample with high voltage, because of the phonon bottleneck and the field dissociation, the ratio will be smaller than 3.en_US
dc.language.isozh_TWen_US
dc.subject單重態zh_TW
dc.subject三重態zh_TW
dc.subject有機發光二極體zh_TW
dc.subjectMEH-PPVen_US
dc.subjectsingleten_US
dc.subjecttripleten_US
dc.subjectratioen_US
dc.titleMEH-PPV有機發光二極體中三重態激子之生成比例zh_TW
dc.titleTriplet exciton formation ratio in MEH-PPV light-emitting-diodeen_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
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