完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 林立基 | en_US |
dc.contributor.author | Li-Chi Lin | en_US |
dc.contributor.author | 孟心飛 | en_US |
dc.contributor.author | 施宙聰 | en_US |
dc.contributor.author | 洪勝富 | en_US |
dc.contributor.author | Hsin-Fei Meng | en_US |
dc.contributor.author | Jow-Tsong Shy | en_US |
dc.contributor.author | Sheng-Fu Horng | en_US |
dc.date.accessioned | 2014-12-12T02:27:27Z | - |
dc.date.available | 2014-12-12T02:27:27Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT900198010 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/68320 | - |
dc.description.abstract | 本實驗是以MEH-PPV為發光材料製作成發光二極體。實驗中分別以光激發與電激發來使樣品發光,比較在一樣的單重態激子濃度下兩種不同激發形式的三重態激子吸收改變率,藉由三重態激子吸收的改變率來得到三重態激子與單重態激子間的比例。這一個比例值在不同的電場下不是一個定值,隨著電場強度的增加,三重態激子與單重態激子的比例會變小,在低電場的區域,這一個比例值高於3,在高電場的區域,因為聲子瓶頸效應與電場拆解三重態激子的關係,使得這一個比例值在高電場的情況下比3小。 | zh_TW |
dc.description.abstract | We use MEH-PPV as the material to fabricate the light –emitting-diode. Comparing the triplet induced-absorptions with optical and electric excitations at same singlet excition density is our main work to get the ratio. This ratio is not a fixed value under different electric fields. As the field’s intensity increases, the ratio will decrease. The ratio will be larger than 3 at intermediate field. While we apply the sample with high voltage, because of the phonon bottleneck and the field dissociation, the ratio will be smaller than 3. | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | 單重態 | zh_TW |
dc.subject | 三重態 | zh_TW |
dc.subject | 有機發光二極體 | zh_TW |
dc.subject | MEH-PPV | en_US |
dc.subject | singlet | en_US |
dc.subject | triplet | en_US |
dc.subject | ratio | en_US |
dc.title | MEH-PPV有機發光二極體中三重態激子之生成比例 | zh_TW |
dc.title | Triplet exciton formation ratio in MEH-PPV light-emitting-diode | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
顯示於類別: | 畢業論文 |