完整後設資料紀錄
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dc.contributor.authorPeng, Yu-Yunen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorHsu, Chia-Hungen_US
dc.date.accessioned2014-12-08T15:08:59Z-
dc.date.available2014-12-08T15:08:59Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2009.1102en_US
dc.identifier.urihttp://hdl.handle.net/11536/6836-
dc.description.abstractThe dc and ac conductive properties of ZnO QDs-SiO(2) and ZnO QDs-SiO(x)N(y) nancomposite films prepared by the target-attached sputtering method are investigated. Both two nanocomposite samples reveal a typical characteristic of a metal-oxide varistor (MOV) on the J-E plots with distinct threshold electric fields (E(th)) which are affected by the molecular bonding configurations in the matrix and at the dot/matrix interfaces. The two systems exhibit dissimilar dependences of dc conductivity (sigma(dc)) on the ZnO content, revealing the limitation of conventional percolation models in which the surface interaction term is usually ignored. The ac conduction behaviors of the two nanocomposite systems were also analyzed and their percolation concentrations V(c) (22.75% for ZnO QDS-SiO(2) and 20.78% for ZnO QDs-SiO(x)N(y)) are determined by the construction of master curves. Analytical results illustrated that the dielectric matrix type indeed affects the defect configuration and transport behaviors inside ZnO dots. Hence, manipulation of dielectric matrix type can possibly achieve various optical and electrical properties in ZnO QDs-dielectric nanocomposite systems.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectDielectricen_US
dc.subjectNanocompositesen_US
dc.subjectPercolationen_US
dc.subjectElectrical Propertiesen_US
dc.titleThe Conductive Property of ZnO QDs-SiO(2) and ZnO QDs-SiO(x)N(y) Nanocomposite Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2009.1102en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue8en_US
dc.citation.spage4892en_US
dc.citation.epage4900en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000267994100052-
dc.citation.woscount4-
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