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dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorLin, Chia-Hsienen_US
dc.contributor.authorLing, Hong-Shien_US
dc.contributor.authorFu, Ying-Jheen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2019-04-03T06:42:16Z-
dc.date.available2019-04-03T06:42:16Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.80.081304en_US
dc.identifier.urihttp://hdl.handle.net/11536/6839-
dc.description.abstractThe diamagnetic shifts of neutral excitons and biexcitons confined in single self-assembled In(Ga)As/GaAs quantum rings are investigated. Unlike quantum dots, quantum rings reveal a considerably large biexciton diamagnetic shift, about two times larger than that of single excitons. Based on model calculations, we found that the inherent structural asymmetry and imperfection, combined with the interparticle Coulomb interactions, is the fundamental cause of the more extended biexciton wave function in the quantum rings. The exciton wave function tends to be localized in one of the potential valleys induced by structural imperfections of the quantum ring due to the strong localization of hole and the electron-hole Coulomb attraction, resembling the behavior in single dots. Our results suggest that the phase coherence of neutral excitons in quantum rings will be smeared out by such wave function localizations.en_US
dc.language.isoen_USen_US
dc.subjectbiexcitonsen_US
dc.subjectcyclotron resonanceen_US
dc.subjectelectron-hole recombinationen_US
dc.subjectexcitonsen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectlocalised statesen_US
dc.subjectself-assemblyen_US
dc.subjectsemiconductor quantum dotsen_US
dc.titleImpacts of structural asymmetry on the magnetic response of excitons and biexcitons in single self-assembled In(Ga)As quantum ringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.80.081304en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume80en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000269639300014en_US
dc.citation.woscount22en_US
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