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dc.contributor.authorChao, TSen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorHao, CPen_US
dc.contributor.authorLiaw, MCen_US
dc.contributor.authorChu, CHen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorSun, WTen_US
dc.contributor.authorHsu, CHen_US
dc.date.accessioned2014-12-08T15:01:56Z-
dc.date.available2014-12-08T15:01:56Z-
dc.date.issued1997-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.1364en_US
dc.identifier.urihttp://hdl.handle.net/11536/683-
dc.description.abstractThe mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p(+)-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.en_US
dc.language.isoen_USen_US
dc.subjectnitrogenen_US
dc.subjectboron penetrationen_US
dc.subjectpMOSFETen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.titleSuppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.36.1364en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue3Ben_US
dc.citation.spage1364en_US
dc.citation.epage1367en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WT45700011-
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