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dc.contributor.authorTsang, JSen_US
dc.contributor.authorGuo, JDen_US
dc.contributor.authorChan, SHen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:01:57Z-
dc.date.available2014-12-08T15:01:57Z-
dc.date.issued1997-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.1728en_US
dc.identifier.urihttp://hdl.handle.net/11536/684-
dc.description.abstractThe influence of the growth procedure on the optical quality of InGaN grown on GaN has been investigated. The photoluminescence spectrum of the sample with a low-temperature-grown GaN cap layer or a graded-temperature-grown GaN cap layer has a shorter peak wavelength than that of the sample grown with a normal-temperature-grown GaN layer. The shift of the peak wavelength increases with the increase of the layer thickness for the sample with the low-temperature-gown GaN. This is because the defects contained in the low-temperature-grown GaN cap layer induce the outdiffusion of In atoms during the temperature-ramped procedure. The narrower linewidths and higher intensities of the PL spectra for InGaN after In outdiffusion may be due to the reduction of the strains, dislocations or defects. The Raman spectra and the Auger electron spectra also indicate that the low-temperature-grown GaN has a lot of defects which reduce the phonon peak intensity and induce the interdiffusion of In atom during the growth of GaN/InGaN heterostructures.en_US
dc.language.isoen_USen_US
dc.subjectGaN/InGaNen_US
dc.subjectphotoluminescenceen_US
dc.subjectRaman spectraen_US
dc.subjectAuger electron spectraen_US
dc.titleInvestigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.36.1728en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue3Ben_US
dc.citation.spage1728en_US
dc.citation.epage1732en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:A1997WT45700083-
Appears in Collections:Conferences Paper


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