Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

標題:	Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films
作者:	Lin, Chun-Chieh Chang, Yi-Peng Ho, Chia-Cheng Shen, Yu-Shu Chiou, Bi-Shiou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Electrodes;nonvolatile memory;resistive random access memory;work function
公開日期:	1-三月-2011
摘要:	A novel material CaCu(3)Ti(4)O(12) (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin-coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.
URI:	http://dx.doi.org/10.1109/TMAG.2010.2101584 http://hdl.handle.net/11536/685
ISSN:	0018-9464
DOI:	10.1109/TMAG.2010.2101584
期刊:	IEEE TRANSACTIONS ON MAGNETICS
Volume:	47
Issue:	3
起始頁:	633
結束頁:	636
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。