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dc.contributor.authorTseng, Wen-Shouen_US
dc.contributor.authorWang, Wei-Hsiangen_US
dc.contributor.authorHong, Tasi-Hauen_US
dc.contributor.authorKuo, Cheng-Tzuen_US
dc.date.accessioned2014-12-08T15:09:01Z-
dc.date.available2014-12-08T15:09:01Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.085502en_US
dc.identifier.urihttp://hdl.handle.net/11536/6856-
dc.description.abstractIn the present study, we use a method that uses the oxidation state of platinum in Co-Cr-Pt oxide films to cause a volume expansion to form isolated nanoparticles through exposure to H(2) microwave plasma. The generated nanoparticles are then used to grow single-walled carbon nanotubes (SWCNTs) at similar to 600 degrees C without the application of a buffer layer using a microwave plasma chemical vapor deposition system. The effects of metal oxide film thickness on the growth of SWCNTs are investigated. The characterization techniques including X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy are carried out, with the results showing that this method used is highly efficient in generating very small and dense catalytic nanoparticles. The results also show that, when the metal oxide film thickness is no more than 2nm, the nanoparticles produced with diameters ranging from 2 to 3nm can be effective for growing vertically and densely aligned SWCNTs. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleMetal Oxide Film for Growing Vertically Aligned Single-Walled Carbon Nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.48.085502en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000269497300065-
dc.citation.woscount2-
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