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dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorChang, Yi-Pengen_US
dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorShen, Yu-Shuen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2014-12-08T15:01:57Z-
dc.date.available2014-12-08T15:01:57Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2010.2101584en_US
dc.identifier.urihttp://hdl.handle.net/11536/685-
dc.description.abstractA novel material CaCu(3)Ti(4)O(12) (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin-coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.en_US
dc.language.isoen_USen_US
dc.subjectElectrodesen_US
dc.subjectnonvolatile memoryen_US
dc.subjectresistive random access memoryen_US
dc.subjectwork functionen_US
dc.titleEffect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2010.2101584en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume47en_US
dc.citation.issue3en_US
dc.citation.spage633en_US
dc.citation.epage636en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287861800030-
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