Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 江文松 | en_US |
dc.contributor.author | Wen-sung Chiang | en_US |
dc.contributor.author | 邱碧秀 | en_US |
dc.contributor.author | Bi-Shiou Chiou | en_US |
dc.date.accessioned | 2014-12-12T02:28:04Z | - |
dc.date.available | 2014-12-12T02:28:04Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT900428018 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/68713 | - |
dc.description.abstract | 微波陶瓷材料已被廣泛用於微波通訊系統中。Ba3(Zn1/3Ta2/3)O9 (BZT)因其有良好微波介電特性而成為常用微波陶瓷材料。本篇論文在研究CuO和B2O3添加物(至2 wt.%)對BZT陶瓷的阻抗及微波介電特性之影響。BZT陶瓷的燒結溫度能有效地從1500℃降至1300℃。添加CuO後之BZT等效電阻率下降、介電係數(εr)提高。添加B2O3後之BZT則能得較低頻率溫度係數(τf )。品質因子(Q × f)和添加量有緊密關連,在添加1 wt.% CuO或1 wt.% B2O3時能達最大值。 | zh_TW |
dc.description.abstract | Microwave ceramic materials are widely used in microwave communication systems. The Ba3(Zn1/3Ta2/3)O9 (BZT) is a common microwave ceramic because of its good microwave dielectric properties. The effects of CuO and B2O3 additives (up to 2 wt.%) on the impedance and microwave dielectric properties of BZT ceramics are investigated. The sintering temperature of BZT ceramics can be effectively reduced from 1500 to 1300℃. With CuO additives, the effective resistance of BZT reduced and dielectric constant (εr) increased. Smaller values of the temperature coefficient of resonant frequency (τf ) are obtained for BZT ceramics with B2O3 additives. The quality factors (Q × f) are strongly dependent upon the amount of additives and reach maximum with 1 wt.% CuO or 1 wt.% B2O3 additives. | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | 微波陶瓷 | zh_TW |
dc.subject | BZT | zh_TW |
dc.subject | microwave | en_US |
dc.subject | ceramic | en_US |
dc.subject | BZT | en_US |
dc.title | 添加物對BZT陶瓷的阻抗及微波介電特性之影響 | zh_TW |
dc.title | Effects of additives on impedance and microwave dielectric properties of BZT ceramic | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子研究所 | zh_TW |
Appears in Collections: | Thesis |