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dc.contributor.author唐乃恩en_US
dc.contributor.authorNai-En Tangen_US
dc.contributor.author李明知en_US
dc.contributor.authorDr. Ming-Chih Leeen_US
dc.date.accessioned2014-12-12T02:28:20Z-
dc.date.available2014-12-12T02:28:20Z-
dc.date.issued2001en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT900429014en_US
dc.identifier.urihttp://hdl.handle.net/11536/68850-
dc.description.abstract在本論文中,我們利用原子力顯微鏡(AFM),掃描電位顯微鏡(SKM)以及微米光激發光譜(micro-PL)等方法,研究氮化鋁鎵薄膜的表面缺陷。其中原子力顯微鏡掃描出六角形的凹洞結構,其寬度大約為1μm,深度為300nm,剖面圖為V字形,為一般所通稱之V-defect。藉掃描電位顯微鏡,發現在凹洞中的表面電位比周圍平坦區域的表面電位低了約0.2V,推測是在凹洞區域產生了類受子形式的缺陷能帶。最後再利用微米光激發光譜量測六角形凹洞處的光譜,發現在凹洞處多了與缺陷相關的譜峰,其發光能量比近能隙發光能量低了0.1eV,我們認為此一譜峰為凹洞所導致的缺陷能帶所產生。zh_TW
dc.description.abstractThe optical and AFM image characteristics of AlGaN surface defects were characterized by atomic force microscopy (AFM), scanning Kelvin microscopy (SKM) and micro-photoluminescence (micro-PL). The AFM image of the surface defects shows an open hexagonal inverted pyramid on the (0001) plane, the so-called “V-defect”, with walls formed by {10-11} planes. The depth of the V-defect is about 300nm and the width is about 1μm. The SKM image revealed that the surface potential of the V-defect is ~0.2V lower than that of the flat region. We suggested that there are acceptor like defect band in the V-defect. The micro–PL revealed that there are extra peak in the V-defect, which energy is 0.1eV lower than the NBE energy. We suggested the origin of the extra peak is the defect band induced by V-defect.en_US
dc.language.isozh_TWen_US
dc.subject原子力顯微鏡zh_TW
dc.subject掃描電位顯微鏡zh_TW
dc.subject微米光激發光譜zh_TW
dc.subject氮化鋁鎵zh_TW
dc.title氮化鋁鎵表面缺陷之光性和原子力顯微鏡影像特性研究zh_TW
dc.titleThe Optical and AFM Image Characteristics of AlGaN Surface Defectsen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis