標題: An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)
作者: Chiu, Mao-Yuan
Chen, Chen-Chia
Sheu, Jeng-Tzong
Wei, Kung-Hwa
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: Organic thin film transistor;Memory;Conjugated polymers;Quantum dot;Core/shell
公開日期: 1-八月-2009
摘要: An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2009.03.011
http://hdl.handle.net/11536/6896
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.03.011
期刊: ORGANIC ELECTRONICS
Volume: 10
Issue: 5
起始頁: 769
結束頁: 774
顯示於類別:期刊論文


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