標題: | An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene) |
作者: | Chiu, Mao-Yuan Chen, Chen-Chia Sheu, Jeng-Tzong Wei, Kung-Hwa 材料科學與工程學系 材料科學與工程學系奈米科技碩博班 Department of Materials Science and Engineering Graduate Program of Nanotechnology , Department of Materials Science and Engineering |
關鍵字: | Organic thin film transistor;Memory;Conjugated polymers;Quantum dot;Core/shell |
公開日期: | 1-八月-2009 |
摘要: | An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.orgel.2009.03.011 http://hdl.handle.net/11536/6896 |
ISSN: | 1566-1199 |
DOI: | 10.1016/j.orgel.2009.03.011 |
期刊: | ORGANIC ELECTRONICS |
Volume: | 10 |
Issue: | 5 |
起始頁: | 769 |
結束頁: | 774 |
顯示於類別: | 期刊論文 |