1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.author萬振宇en_US
dc.contributor.authorWan Cheng - Yuen_US
dc.contributor.author裘性天en_US
dc.contributor.author莊琇惠en_US
dc.contributor.authorChiu Hsin–Teinen_US
dc.contributor.authorChuang Shiow–Hueyen_US
dc.date.accessioned2014-12-12T02:29:03Z-
dc.date.available2014-12-12T02:29:03Z-
dc.date.issued2001en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT900500062en_US
dc.identifier.urihttp://hdl.handle.net/11536/69292-
dc.description.abstract以C6F6為前驅物，以Si(100)矽晶片為基材，利用熱壁式反應器，經電漿輔助化學氣相沉積法來成長薄膜，並探討在不同電漿強度及不同退火溫度下，薄膜內的鍵結環境、物種組成及介電係數有何改變。zh_TW
dc.description.abstractFluorinated amorphous carbon films can be used as low dielectric constant interlayer dielectric materials. The films are deposited by using hexafluorobenzene (C6F6) as the source gas and argon as the carrier gas by PECVD.en_US
dc.language.isozh_TWen_US
dc.subject六氟苯zh_TW
dc.subject電漿輔助化學氣相沉積zh_TW
dc.subject含氟碳膜zh_TW
dc.subject低介電含氟碳膜zh_TW
dc.subjectC6F6en_US
dc.subjectPECVDen_US
dc.subjectFluorinated Carbon Thin Filmen_US
dc.subjectLow Dielectricen_US
dc.title以六氟苯經電漿輔助化學氣相沉積非晶型低介電含氟碳膜zh_TW
dc.titleAmorphous Low Dielectric Fluorinated Carbon Thin Film Grown from C6F6 by PECVDen_US
dc.typeThesisen_US
dc.contributor.department應用化學系碩博士班zh_TW
顯示於類別：畢業論文


相關內容
Loading...