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dc.contributor.authorTseng, Sheng-Cheen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:09:06Z-
dc.date.available2014-12-08T15:09:06Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0877-1en_US
dc.identifier.issn1522-3965en_US
dc.identifier.urihttp://hdl.handle.net/11536/6946-
dc.description.abstractA downconversion micrornixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this paper, This micromixer has a single-to-differential RF input transconductance stage formed by the NMOS wide-swing cascode current mirror. PMOS wide-swing cascode current mirror is also employed to improve conversion gain while a super source follower is used at the output to reduce the output impedance and to transfer more power to the load. The fully integrated downconverter functions at 7 GHz and has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 1.8 V supply voltage. The current consumption of the mixer core is I m-A. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage.en_US
dc.language.isoen_USen_US
dc.titleHigh gain CMOS Gilbert downconverter with wide-swing cascode current-mirror transconductor and loaden_US
dc.typeArticleen_US
dc.identifier.journal2007 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM, VOLS 1-12en_US
dc.citation.spage4085en_US
dc.citation.epage4088en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000255973402203-
Appears in Collections:Conferences Paper