完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, Ming-Ta | en_US |
dc.contributor.author | Ho, Meng-Huan | en_US |
dc.contributor.author | Lin, Kuan-Heng | en_US |
dc.contributor.author | Chen, Jenn-Fang | en_US |
dc.contributor.author | Chen, Teng-Ming | en_US |
dc.contributor.author | Chen, Chin H. | en_US |
dc.date.accessioned | 2014-12-08T15:09:07Z | - |
dc.date.available | 2014-12-08T15:09:07Z | - |
dc.date.issued | 2009-07-20 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3173824 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6951 | - |
dc.description.abstract | An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/cm(2). This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | charge injection | en_US |
dc.subject | electric admittance | en_US |
dc.subject | electrical conductivity | en_US |
dc.subject | organic compounds | en_US |
dc.subject | organic light emitting diodes | en_US |
dc.subject | organic semiconductors | en_US |
dc.subject | p-i-n diodes | en_US |
dc.subject | thin films | en_US |
dc.subject | tungsten compounds | en_US |
dc.title | Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3173824 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 95 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000268405300079 | - |
dc.citation.woscount | 4 | - |
顯示於類別: | 期刊論文 |