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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.contributor.authorLi, Tien-Yehen_US
dc.contributor.authorCheng, Hui-Wenen_US
dc.date.accessioned2014-12-08T15:09:07Z-
dc.date.available2014-12-08T15:09:07Z-
dc.date.issued2009-07-15en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/28/285701en_US
dc.identifier.urihttp://hdl.handle.net/11536/6965-
dc.description.abstractThis study conducts a three-dimensional electro-thermal time-domain simulation for numerical analysis of cylindrical-shaped phase change memories (PCMs). The influence of chalcogenide material, germanium antimony telluride (GeSbTe or GST), structure on PCM operation is explored. GST with vertical structure exhibits promising characteristics. The bottom electrode contact (BEC) is advanced to improve the operation of PCMs, where a 25% reduction of the required programming current is achieved at a cost of 26% reduced resistance ratio. The position of the BEC is then shifted to further improve the performance of PCMs. The required programming current is reduced by a factor of 11, where the resistance ratio is only decreased by 6.9%. However, the PCMs with a larger shift of BEC are sensitive to process variation. To design PCMs with less than 10% programming current variation, PCMs with shifted BEC, where the shifted distance is equal to 1.5 times the BEC's radius, is worth considering. This study quantitatively estimates the structure effect on the phase transition of PCMs and physically provides an insight into the design and technology of PCMs.en_US
dc.language.isoen_USen_US
dc.titleThe geometric effect and programming current reduction in cylindrical-shaped phase change memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/28/285701en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue28en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000267612600025-
dc.citation.woscount6-
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