标题: | 应用模糊理论构建晶圆缺陷点与群聚现象之管制图 Process Control Chart for Wafer Defects and Clustering Using Fuzzy Theory |
作者: | 王敏嘉 Min-Chia Wang 唐丽英 Lee-Ing Tong 工业工程与管理学系 |
关键字: | 积体电路;晶圆;缺陷点;管制图;群聚现象;模糊理论;Integrated circuits;wafer;defect;statistical process control;cluster;Fuzzy theory |
公开日期: | 2002 |
摘要: | 积体电路(Integrated Circuit,IC)制造商在应用传统之缺陷点管制图(c chart)来管制晶圆之缺陷点数(defect)时,须假设晶圆上的缺陷点数会呈现随机分布且服从卜瓦松(Poisson)分配。然而随着晶圆制造技术的精进,晶圆面积逐渐增大,晶圆上缺陷点的分布会出现群聚(clustering)现象,导致缺陷点呈现卜瓦松(Poisson)分配的假设不再成立,若仍使用传统缺陷数管制图来监控晶圆,则会产生过多的假警报。为了解决缺陷群聚造成传统缺陷数管制图失效的问题,许多中外文献提出修正之缺陷数管制图,然而这些修正之管制图各有一些缺失,实务上仍无法有效的监控晶圆表面之缺陷点。本研究的主要目的即是在考虑缺陷出现群聚的状况下,应用模糊理论(fuzzy theory)建构出一个可以包含专家智慧与工程人员经验之模糊管制图,以有效且简便的管制晶圆表面的缺陷数。本研究所提之管制图经新竹科学园区某积体电路公司之实际资料验证后,显示此管制图不但与良率吻合,且可以较现有之修正缺陷数管制图更快速的判断出异常的原因,确实能有效地减少假警报的发生。 Integrated circuits (IC) manufacturers usually employ c-charts to monitor wafer defects. As the surface area of the wafer increases, the clustering phenomenon of wafer defects becomes apparent. The defect clustering causes the Poisson based c-chart to have many false alarms. Although many modified c-charts have been developed to reduce the false alarms, these control charts still have some drawbacks for practical use. This study proposes a process control chart using Fuzzy theory and engineering experience to monitor wafer defects with clustering phenomenon. The proposed method is simpler and more effecient than the modified c-charts. A case study from an IC company is presented to illustrate the proposed method. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT910031016 http://hdl.handle.net/11536/69773 |
显示于类别: | Thesis |