Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsay, Shiow-Fon | en_US |
dc.contributor.author | Lin, D. -S. | en_US |
dc.date.accessioned | 2014-12-08T15:09:11Z | - |
dc.date.available | 2014-12-08T15:09:11Z | - |
dc.date.issued | 2009-07-01 | en_US |
dc.identifier.issn | 0039-6028 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.susc.2009.04.007 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7004 | - |
dc.description.abstract | Density functional theory (DFT) with LDA and GGA have been employed to study the interface and thin film properties of NaCl on a Ge(0 0 1) surface. The atomic and electronic structures of thin NaCl films from one to ten monolayers were analyzed. The layer adsorption energies show that a quasi-crystalline (0 0 1) fcc NaCl film is built up via a layer-by-layer growth mode with NaCl thickness above 2 ML. Simulated STM images show a well-resolved (1 x 1) NaCl atomic structure for sample bias voltage V(s) < -2.5 V and the bright protrusions should be assigned to the Cl(-) ions of the NaCl film. The Ge substrate dimer is reserved and buckled like a clean Ge(0 0 1)-p(2 x 2) surface as the result of weak interface interaction between the dangling bonds coming from valence pi states of the Ge substrate and the 3p states of the interfacial Cl(-) ion. These results are consistent with the experiments of STM, LEED and EELS. (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Density functional calculations | en_US |
dc.subject | Semiconductor-insulator interfaces | en_US |
dc.subject | Alkali halides | en_US |
dc.subject | Germanium | en_US |
dc.subject | Surface structure | en_US |
dc.subject | Thin film structures | en_US |
dc.subject | Surface electronic phenomena | en_US |
dc.title | Atomic and electronic structures of thin NaCl films grown on a Ge(001) surface | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.susc.2009.04.007 | en_US |
dc.identifier.journal | SURFACE SCIENCE | en_US |
dc.citation.volume | 603 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.spage | 2102 | en_US |
dc.citation.epage | 2107 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000267083500019 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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