標題: New Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effect
作者: Zan, Hsiao-Wen
Kao, Shih-Chin
光電工程學系
Department of Photonics
關鍵字: Bias modulation;memory;organic thin-film transistor (OTFT);photosensitivity;phototransistor;stress
公開日期: 1-七月-2009
摘要: A simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.
URI: http://dx.doi.org/10.1109/LED.2009.2021867
http://hdl.handle.net/11536/7034
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2021867
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 7
起始頁: 721
結束頁: 723
顯示於類別:期刊論文


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