Full metadata record
DC FieldValueLanguage
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorKao, Shih-Chinen_US
dc.date.accessioned2014-12-08T15:09:13Z-
dc.date.available2014-12-08T15:09:13Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2021867en_US
dc.identifier.urihttp://hdl.handle.net/11536/7034-
dc.description.abstractA simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.en_US
dc.language.isoen_USen_US
dc.subjectBias modulationen_US
dc.subjectmemoryen_US
dc.subjectorganic thin-film transistor (OTFT)en_US
dc.subjectphotosensitivityen_US
dc.subjectphototransistoren_US
dc.subjectstressen_US
dc.titleNew Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effecten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2021867en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue7en_US
dc.citation.spage721en_US
dc.citation.epage723en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000267607900008-
dc.citation.woscount13-
Appears in Collections:Articles


Files in This Item:

  1. 000267607900008.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.