低電壓能帶隙參考電壓產生器之設計

Abstract

本篇論文描述一個工作在電壓源小於1V之互補式金氧半導體能帶隙參考電壓產生器，及藉由提出一種可套用於目前已提出之帶隙參考電壓產生器的電流曲率補償法，產生更精確的輸出電壓，可與現今之能帶隙參考電壓產生器形成完整的分類。 在本論文中提出了一個採用全新架構的低電壓能帶隙參考電壓產生器，以台灣積體電路製造股份有限公司以標準0.25微米1P5M 補式金氧半導體製程實現，並自行量測完成。量測結果顯示本架構可在最小工作電壓0.85V下，產生的輸出電壓為238.3mV，有效溫度係數為58.1ppm/°C, 電壓端的雜訊比在頻率為10kHz下為-33.2dB，同時直流電流為28μA。本論文也提出一種電流曲率補償法，套用目前現行的能帶隙參考電壓產生器，模擬結果可達到在最小工作電壓0.9V下，產生的輸出電壓為513.1mV，有效溫度係數為10.7ppm/°C, 電壓端的雜訊比在頻率為10kHz下為-27.5dB。

A sub-1-V CMOS bandgap reference is presented in this thesis. A curvature-compensated current technology of a proposed bandgap reference is also described in this thesis. The proposed new sub-1-V bandgap reference is fabricated using a standard TSMC 0.25μm 1P5M CMOS process and has been measured completely. The measurement results of this chip show that, at the minimum supply voltage 0.85V, the output reference voltage is 238.2mV with an effective temperature coefficient of 58.1ppm/°C while the DC current is 28μA. At 0.85V supply voltage, the measured power supply noise rejection ratio is -33.2dB at 10kHz. A method in curvature-compensated current of a proposed bandgap reference is presented in this thesis. The simulation results show that, at the minimum supply voltage 0.9V, the output reference voltage is 513.1mV with an effective temperature coefficient of 10.7ppm/°C. At 0.9V supply voltage, the measured power supply noise rejection ratio is -27.5dB at 10kHz.