順偏強化寫入機制於快閃式記憶體之探討

Abstract

順偏強化通道熱電子入射在快閃式記憶體中的應用中被用來作為寫入 的動作。順偏強化通道熱電子入射可以提供更好的導通電壓線性分布，使 得閘極電壓的可控制範圍比傳統的通道熱電子入射還要大。因此，順偏強 化通道熱電子入射可以提供良好的應用在多位元快閃記憶體上。而0.5伏 的順偏電壓選取是因為符合下面三項優點：(1)較高的寫入能力;(2)可以 接受的電流大小;以及(3)影響較小的干擾。

A 0.5V forward bias enhanced channel hot eletron injection (FBECHEI) is developed for programming action. FBECHEI can provide a better linear behavior of threshold voltage in terms of a wider control gate voltage range compared with traditional CHEI；therefore, FBECHEI ensures promising potentials in multilevel applications. Other merits benefited from implementation of 0.5V forward bias enhancements are:(1) higher programming ability ;(2) tolerable current level; and (3) acceptable programming disturbs.