濺鍍P型氧化鋅薄膜電性及物性性質的研究

Abstract

隨著光電業的蓬勃發展，氧化鋅也廣泛地應用在光電材料方面。氧化鋅有一些獨特的性質，例如: 它是具有寬和直接能隙的半導體、激發光的波長是屬於短波長(發藍光)。本實驗則專注於成長P型氧化鋅薄膜以及氧化鋅薄膜的物性及電性探討；在簡介中，可以了解一般氧化鋅薄膜的應用、目前用來摻雜P型氧化鋅的摻雜元素、以及成長P氧化鋅困難的原因。而在結果與討論中，我們分成三個部份：第一部份：在物性方面我們可以獲得在高溫(5000C)以及通氮氣的條件下成長氧化鋅薄膜會有很有趣的現象發生；在電性方面可以得到P型的氧化鋅。第二部份則是先將矽基版佈植氮分子後，再用來成長氧化鋅，藉著儀器的觀察與第一部份實驗差異，在這個部份也可以得到P型的氧化鋅薄膜。而第三部份則是在笑氣的氣份下成長氧化鋅薄膜和對氧化鋅薄膜造成影響物性及電性的探討。最後是本實驗的結論與未來努力的方向。

In the growing industry of photoelectric devices, ZnO is extensively used as the photoelectric material. ZnO has some novel properties, for example：it is the semiconductor of wide and direct band gap, and it emits light with the short wavelength (blue light range). We keep our mind on the growing p-type zinc oxide thin films and study their physical and electrical properties. In the introduction, we illustrate the general applications of zinc oxide thin films, and further explain what are the element used for doping p-type zinc oxide and the difficulties of growing p-type zinc oxide thin films. Furthermore, in the chapter of result and discussion, we divide the content into three parts：the first part, we discuss the physical properties of zinc oxide with the strange behavior under high growing temperature. We obtained the p-type zinc oxide thin films as the growing temperature 4000C and 3000C. The second part, we deposited zinc oxide thin films on pre-implantation silicon wafer and using the instruments to analyze the difference between partⅠ and part Ⅱ. We also got the p-type zinc oxide thin films as the growing temperature 4000C and 3000C. The third part, the zinc oxide thin films are deposited under the condition of filling with nitrous oxide. We study the physical and electrical properties too. The last is the conclusion and the future work.