以S參數法設計雙推式微波振盪器

Abstract

本篇論文利用S-參數設計理論，設計兩個頻段的雙推式振盪器，並採用混合微波積體電路製造，實現振盪器設計。 首先製作一個L-band（1.57GHz）的基頻振盪器，在中心頻100kHz偏移量時其相位雜訊-102dBc/Hz。再以S-參數設計雙推式振盪器，頻率由設計的1.5GHz推至3.0GHz輸出，在中心頻100kHz偏移量時其相位雜訊 -96dBc/Hz，基頻抑制了-25dBc。我們採用兩個型號為菲力普BFG540X的封裝電晶體。 接著再設計K-band的雙推式振盪器，將振盪頻率由9GHz推至18GHz，於中心頻1MHz偏移量時其相位雜訊為-93dBc/Hz，基頻抑制了-21dBc，使用之電晶體，型號為NE32584c。

Base on a derivation with the S-parameter, a new method is proposed to design push-push oscillators in the S-band and K-band. Two push-push oscillators are realized using hybrid microwave integrated circuit. The first oscillator is designed at 1.57GHz, of which the phase noise at 100kHz offset is –102dBc/Hz. The first push-push oscillator is designed at 1.5GHz and has an output frequency at 3GHz, of which the phase noise at 100kHz offset is –96dBc/Hz. The fundamental oscillation at 1.5GHz is suppressed by -25dB through the push-push mechanism. The second push-push oscillator is designed to have an output frequency of 18GHz. The phase noise is measured to have –93dBc/Hz at 1MHz offset. The fundamental oscillation is suppressed by –21dBc at the push-push output.