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dc.contributor.authorGao, Zhi Qiangen_US
dc.contributor.authorXia, Ping Fanen_US
dc.contributor.authorLo, Pik Kwanen_US
dc.contributor.authorMi, Bao Xiuen_US
dc.contributor.authorTam, Hoi Lamen_US
dc.contributor.authorWong, Man Shingen_US
dc.contributor.authorCheah, Kok Waien_US
dc.contributor.authorChen, Chin H.en_US
dc.date.accessioned2014-12-08T15:09:15Z-
dc.date.available2014-12-08T15:09:15Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.02.025en_US
dc.identifier.urihttp://hdl.handle.net/11536/7066-
dc.description.abstractTwo novel p-phenylenediamine-substituted fluorenes have been designed and synthesized. Their applications as hole injection materials in organic electroluminescent devices were investigated. These materials show a high glass transition temperature and a good hole-transporting ability. It has been demonstrated that the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped p-phenylene-diamine-substituted fluorenes, in which F4-TCNQ acts as p-type dopant, are highly conducting with a good hole-transporting property. The organic light emitting devices (OLEDs) utilizing these F4-TCNQ-doped materials as a hole injection layer were fabricated and investigated. The pure Alq(3)-based OLED device shows a current efficiency of 5.2 cd/A at the current density of 20 mA/cm(2) and the operation lifetime is 1500 h with driving voltage increasing only about 0.7 mV/h. The device performance and stability of this hole injection material meet the benchmarks for the commercial requirements for OLED materials. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFluoreneen_US
dc.subjectp-Phenylenediamineen_US
dc.subjectHole injection materialen_US
dc.subjectOrganic electroluminescent devicesen_US
dc.subjectHole transporting materialsen_US
dc.titlep-Doped p-phenylenediamine-substituted fluorenes for organic electroluminescent devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.02.025en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue4en_US
dc.citation.spage666en_US
dc.citation.epage673en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000267335800016-
dc.citation.woscount9-
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