Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Syu, Jin-Siang | en_US |
dc.contributor.author | Meng, Chinchun | en_US |
dc.contributor.author | Yen, Ying-Chieh | en_US |
dc.contributor.author | Huang, Guo-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:09:16Z | - |
dc.date.available | 2014-12-08T15:09:16Z | - |
dc.date.issued | 2009-07-01 | en_US |
dc.identifier.issn | 0895-2477 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/mop.24433 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7076 | - |
dc.description.abstract | The 0.35-mu m SiGe BiCMOS high linearity Gilbert upconverters are demonstrate in this article by utilizing NMOS and PMOS transconductance amplifiers (TCAs), respectively. To improve the linearity of a Gilber upconverter, the IF input TCA is rerplaced by a bias-offset differential pair. A reactive LC current combiner is used as the load of the Gilber mixer to double the output current. The upconverter with an NMOS TCA archieves the conversion gain of -4 dB, the OP(ldB) of -11 dBm, and the OIP(3) of 5.5 dBm, whereas the other one with a PMOS TCA has the conversion gain, OP(ldB), and OIP(3) of -6 dB, -11 dBm, and 9.5 dBm, respectively. Furthermore, the LC current combiner can be extended to a dual-band version. The 2.4/5.7 GHz dual-band upconverters is also demonstrated in this work. The conversion gain at 2.4/5.7 GHz is -3/-3.5 dB with the OP(ldB) of -15.5/-15 dBm and the OIP(3) of -2.5/-3 dBm, respectively. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1718-1722, 2009; Published online in Wiley Interscience (www.interscience.wiley.com). DOI 10.1002/mop.24433 | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SiGe BiCMOS | en_US |
dc.subject | bias-offset | en_US |
dc.subject | Gilbert mixer | en_US |
dc.subject | transconductance amplifier (TCA) | en_US |
dc.subject | dual-band | en_US |
dc.title | GILBERT UPCONVERSION MIXERS USING SINGLE-BAND/DUAL-BAND LC CURRENT COMBINERS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/mop.24433 | en_US |
dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
dc.citation.volume | 51 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 1718 | en_US |
dc.citation.epage | 1722 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | 奈米中心 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.contributor.department | Nano Facility Center | en_US |
dc.identifier.wosnumber | WOS:000265905200033 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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