利用陽極處理氧化鋁為模板成長氧化矽管

Abstract

本研究中，利用四氯化矽（SiCl4）作為前驅物，通過載有自NaH熱裂解為Na並流佈於陽極處理氧化鋁（anodic aluminum oxide，簡稱為AAO）通道的Na管之後，成功製備出與AAO孔徑相同之Si/SiO2管材料，通入氧氣可使其完全氧化為純SiO2管。利用掃描式電子顯微鏡（SEM），穿透式電子顯微鏡（TEM），能量散佈光譜儀（EDS），電子繞射（ED），紅外線光譜儀（IR），X光粉末繞射儀（XRD），X光光電子能譜儀（XPS）可以鑑定產物的形狀與組成。 由SEM得知，當反應溫度為623 K，退火溫度873 K時，可以得到管壁具有孔洞的管狀產物，經由EDS鑑定其成份為Si與O。從ED與XRD圖譜得知產物為非晶相的結構。IR圖譜亦顯示含有Si-O-Si之吸收。XPS分析中則可發現Si的化學環境中含有元素態與氧化態兩種鍵結。將反應所得到的Si/SiO2管，通入氧氣可完全氧化成非晶相之二氧化矽管。至於管壁上的孔洞利用XRD與EDS分析得到的結論是由於反應時生成的NaCl嵌在產物管壁上，當利用HCl去除AAO時，NaCl也一同被溶解去除，留下管壁上的孔洞。

Si/SiO2 tubes were successfully synthesized by using SiCl4 as a precursor to react with Na tubes which decomposed from NaH and flowed into AAO channel. The diameter of the synthesized Si/SiO2 tubes consist with that of AAO channels. The samples were characterized by SEM, TEM, EDS, ED, IR, XRD and XPS to examine the morphology and composition. SEM studies indicated that the tubes with porous walls were found at the reaction temperature of 623 K and annealing temperature of 873 K. From EDS analysis, those tubes consisted of Si and O elements. ED and XRD studies showed that the tubes were amorphous, and Si-O-Si absorption was observed by IR. According to the XPS data, there were two types of chemical environment for Si in this sample – Si and SiO2. The Si/SiO2 tubes were oxidized futher by O2 stream to form pure SiO2 tubes. The reason of forming the pores on the wall was detemined by EDS and XRD, it is speculated that NaCl was formed during the reaction to insert on the wall, and dissolved with HCl solution for removing AAO membranes.