標題: | Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density |
作者: | Ling, Shih-Chun Chao, Chu-Li Chen, Jun-Rong Liu, Po-Chun Ko, Tsung-Shine Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Cheng, Shun-Jen Tsay, Jenq-Dar 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
關鍵字: | dislocation density;epitaxial growth;gallium compounds;III-V semiconductors;nanostructured materials;nanotechnology;photoluminescence;semiconductor epitaxial layers;semiconductor growth;transmission electron microscopy;wide band gap semiconductors;X-ray diffraction |
公開日期: | 22-六月-2009 |
摘要: | The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3x10(10) to 3.5x10(8) cm(-2). From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG. |
URI: | http://dx.doi.org/10.1063/1.3158954 http://hdl.handle.net/11536/7094 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3158954 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 94 |
Issue: | 25 |
結束頁: | |
顯示於類別: | 期刊論文 |