創傷敷料用HA/PLLA多孔性薄膜之製備與評估

Abstract

本實驗利用半導體製程技術製備矽晶圓圓柱陣列模仁以做為薄膜穿孔之模具，設計之圓柱直徑50μm、間距50μm，模仁大小為2cm×2cm。將HA/PLLA高分子混合液旋塗於矽晶圓表面作為薄膜，然後以微熱壓方式在HA/PLLA薄膜上沖孔。將無法貫穿之薄膜再以離子蝕刻(RIE)方式進行薄膜穿孔處理。為了降低成本及製程手續，另外以模仁錯位對壓方式作HA/PLLA薄膜沖孔加工，將製備完成之薄膜進行物性分析及細胞測試。 本研究利用ICP蝕刻製備之模仁其圓柱深度約為100μm、圓柱頂部直徑約為33μm、底部直徑約為44μm、蝕刻率約為2μm/min、深寬比約為1：2.27。製備完成之多孔性HA/PLLA薄膜，其RIE蝕刻率約為0.625μm/sec，且孔徑一致、膜厚均勻。藉由細胞測試後，證實HA/PLLA薄膜具有良好之生物相容性及促使纖維母細胞增生的特性。

In this experiment, a series of columnar array served as punches were fabricated on silicon wafer by semiconductor manufacture process. In the mean time HA/PLLA membranes were prepared by spin coating upon the surface of wafer. Then the membranes were punched by the columnar array at elevated temperature. Holes on HA/PLLA membranes which were not fully penetrated were then processed by RIE. In order to reduce the cost, porous HA/PLLA membranes were also manufactured by punching with two shifted molds. Finally the porous membranes were tested for physical properties and cell compatiability.

Based on the experiment results, the depth of the column in the mold is about 100μm, diameter of the column on the top is about 33μm, on the bottom is about 44μm, ICP etching rate is about 2μm/min, aspect ratio is about 1: 2.27. The etching rate of RIE is about 0.625μm/sec. Both the hole diameter and the thickness in HA/PLLA membranes were very precise. Cell test results show that HA/PLLA memberanes have good biocompatibility and promote fibroblast growth.