Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO(3)-SrRuO(3) capacitors

Abstract

The leakage current in epitaxial BiFeO(3) capacitors with bottom SrRuO(3) and top Pt electrodes, grown by pulsed laser deposition on SrTiO(3) (100), SrTiO(3) (110), and SrTiO(3) (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively.