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dc.contributor.authorChen, Chien-Chonen_US
dc.contributor.authorSay, Wen C.en_US
dc.contributor.authorHsieh, Sheng-Jenen_US
dc.contributor.authorDiau, Eric Wei-Guangen_US
dc.date.accessioned2014-12-08T15:09:20Z-
dc.date.available2014-12-08T15:09:20Z-
dc.date.issued2009-06-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-009-5093-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/7126-
dc.description.abstractWe propose a mechanism for the growth of crystalline anodic titanium-oxide (ATO) nanochannel arrays based on thermodynamic considerations and structural imperfections. Both amorphous and crystalline ATO films were obtained from the anodization of a titanium foil. Amorphous ATO nanotubes have a single-layer form, which makes them inefficient for use in photo-catalytic and solar-cell applications. Annealed ATO nanotubes are considered non-stoichiometric if the effect of oxygen partial pressure on the composition is significant. The driving force behind growing crystalline ATO nanotubes is the drawing of oxygen from the atmosphere to the oxygen site, which consequently decreases the concentration of oxygen vacancies in the anatase phase. The small ionization energies of titanium ions produce the stoichiometric defects. A diagram showing Gibbs energy and Kroger-Vink notation to indicate the strong influence of the non-stoichiometric ATO structure is deduced.en_US
dc.language.isoen_USen_US
dc.titleA mechanism for the formation of annealed compact oxide layers at the interface between anodic titania nanotube arrays and Ti foilen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-009-5093-6en_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume95en_US
dc.citation.issue3en_US
dc.citation.spage889en_US
dc.citation.epage898en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000264809500041-
dc.citation.woscount7-
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