A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity

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DC 欄位	值	語言
dc.contributor.author	Chang, T.	en_US
dc.contributor.author	Kao, H. L.	en_US
dc.contributor.author	Chen, Y. J.	en_US
dc.contributor.author	Liu, S. L.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:02:00Z	-
dc.date.available	2014-12-08T15:02:00Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2377-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/719	-
dc.description.abstract	We report the performance of 0.18 mu m RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz f(max), and a good adjacent channel power ratio (ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.	en_US
dc.language.iso	en_US	en_US
dc.title	A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST	en_US
dc.citation.spage	457	en_US
dc.citation.epage	460	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000265829300107	-
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