标题: | 以晶须法制备聚三己基噻吩奈米线并探讨退火处理对其特性之影响 Fabrication of Poly(3-hexylthiophene) Nanowires and Effect of Thermal and Solvent Annealing |
作者: | 傅传闵 Fu, Chuan-Min 陈俊太 Chen, Jiun-Tai 应用化学系分子科学硕博士班 |
关键字: | 聚三己基噻吩;奈米线;晶须法;退火处理;共轭高分子太阳能电池;有机场效电晶体;Poly(3-hexylthiophene);Nanowires;Whisker method;Annealing;Conjugated polymer solar cell, .;Organic field effect transistor |
公开日期: | 2012 |
摘要: | 聚三己基噻吩(Poly(3-hexylthiophene), P3HT)是一个近几年相当热门的共轭高分子材料,主要是其具有独特的物理与电学特性,因此被广泛应用于有机光电元件,例如共轭高分子太阳能电池(conjugated polymer solar cells, CPSC)、有机场效电晶体(organic field effect transistor, OFET)或是有机发光二极体(organic light-emitting diodes, OLED)等。 本篇论文是利用晶须法(whisker method)与混和溶剂法(mix-solvent method)来制备聚三己基噻吩的奈米线,并探讨温度退火与溶剂退火对聚三己基噻吩奈米线的形态与结晶性等特性的影响。晶须法主要是将聚三己基噻吩利用加热的方式使其溶解于临界溶剂中,在高分子溶液降温的过程中,因高分子与临界溶剂间的作用力,使高分子链自组装为线状的奈米结构,经原子力显微镜(atomic force microscope, AFM)与穿透式电子显微镜(transmission electron microscope, TEM)检视下,发现聚三己基噻吩奈米线长度为微米等级,宽度约为二十到三十奈米,是具有相当大长宽比的奈米结构。聚三己基噻吩奈米线经温度退火与溶剂退火后并无发现雷利不稳定性之类的形态转变,其形态仍可保持。经X光绕射仪(X-Ray Diffraction, XRD)与示差扫描量热分析仪(Differential Scanning Calorimetry, DSC)鉴定后,发现聚三己基噻吩奈米线的结晶性获得提升。接着我们将此结果应用于反式共轭高分子太阳能电池与有机场效电晶体,发现载子迁移率了提升一个数量级,而光电转换效率提升了近70 %。 In recent years, poly(3-hexylthiophene) (P3HT) has been extensively studied because of its unique physical and electrical properties. P3HT-based materials has been widely applied to different optoelectronic devices such as s conjugated polymer solar cell (CPSC), organic field effect transistor (OFET), and organic light-emitting diode (OLED). In this thesis, we prepared P3HT nanowires by using the whisker method and the mix-solvent method. We also studied the effects of thermal annealing and solvent annealing on the morphologies and crystallinities of P3HT nanowires. In the whisker method, P3HT is dissolved in heated p-xylene which is a marginal solvent for P3HT at room temperatures. After cooling, P3HT nanowires are formed by self-assembly and are dispersed in p-xylene. The formation of the nanowires was confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). The lengths of the nanowires with high aspect ratios are several microns and the diameters are about 20-30 nm. After thermal and solvent annealing, the morphologies of P3HT nanowires are maintained, and the Rayleigh-instability-type transformation of the P3HT nanowires is not observed. The crystallinities of the P3HT nanowires were found to be increased, as confirmed by X-Ray Diffraction (XRD) and Differential Scanning Calorimetry (DSC). The device performances of organic field effect transistors and organic solar cells were also examined. The charge mobility is increased by one order, and the power conversion efficiency is increased by ~ 70 %. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070052403 http://hdl.handle.net/11536/72198 |
显示于类别: | Thesis |