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dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorLin, Shawn-Yuen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChhajed, Sameeren_US
dc.contributor.authorKim, Jong Kyuen_US
dc.contributor.authorSchubert, E. Freden_US
dc.date.accessioned2014-12-08T15:09:27Z-
dc.date.available2014-12-08T15:09:27Z-
dc.date.issued2009-05-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3144242en_US
dc.identifier.urihttp://hdl.handle.net/11536/7221-
dc.language.isoen_USen_US
dc.titleHigh output power density from GaN-based two-dimensional nanorod light-emitting diode arrays (vol 94, 141111, 2009)en_US
dc.typeCorrectionen_US
dc.identifier.doi10.1063/1.3144242en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000266500400075-
dc.citation.woscount0-
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