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dc.contributor.authorNilsson, Sen_US
dc.contributor.authorPenner, Uen_US
dc.contributor.authorSchmalz, Ken_US
dc.contributor.authorYassievich, INen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorTsai, WCen_US
dc.date.accessioned2014-12-08T15:02:00Z-
dc.date.available2014-12-08T15:02:00Z-
dc.date.issued1997-02-15en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/723-
dc.description.abstractWe describe photoluminescence and admittance spectroscopy of p-type Si/Si0.25Ge0.25/Si quantum well structures with the SiGe quantum well surrounded by undoped Si spacer layers of various thickness. Holes confined in the SiGe quantum well create a local electric field, which induces potential barriers for holes in the surrounding Si: and a potential well for electrons in the vicinity of the Sice quantum-well region. Decreasing the thickness of one of the Si spacers from 30 nm to 5 nm increases the local electric field and shifts the SiGe-related near-band-edge photoluminescence spectrum to higher photon energies. This can be explained by a reduced exciton binding energy due to exciton polarization. The polarization is caused by the increasingly asymmetrical potential well for electrons and holes for the thinner Si spacer layers. In addition, admittance spectroscopy was carried out in order to measure the potential barriers for the confined holes for various thicknesses of the Si spacer layers. For thicker Si spacer layers, the results are in agreement with the photoluminescence data. For thinner Si spacer layers, thermally activated tunnelling of holes via the potential barrier was observed, Our interpretations are supported by theoretical calculations.en_US
dc.language.isoen_USen_US
dc.subjectfield effecten_US
dc.subjectphotoluminescenceen_US
dc.subjectsiliconen_US
dc.subjectgermaniumen_US
dc.subjectquantum wellsen_US
dc.titleLocal electric field effects in a SiGe quantum well investigated by photoluminescenceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume294en_US
dc.citation.issue1-2en_US
dc.citation.spage190en_US
dc.citation.epage193en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WX96200043-
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