完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, Hua-Chien_US
dc.contributor.authorChen, Chia-Fuen_US
dc.contributor.authorTsay, Chien-Yieen_US
dc.contributor.authorLeu, Jih-Perngen_US
dc.date.accessioned2014-12-08T15:09:29Z-
dc.date.available2014-12-08T15:09:29Z-
dc.date.issued2009-05-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2008.08.080en_US
dc.identifier.urihttp://hdl.handle.net/11536/7242-
dc.description.abstractPoly-crystalline ZnO films with high oriented columnar grains were deposited on ZnO-coated seed layers by chemical bath deposition (CBD) in an aqueous-solution bath containing zinc nitrate [Zn(NO(3))(2)center dot 6H(2)O], and dimethylamineborane (DMAB) at 60 degrees C without pre-activation especially. Sol-gel ZnO films on glass substrates were used as the seed layers which the mean size of the crystals in seed layer increased from several to approximately 80nm at temperature from 150 degrees C to 550 degrees C. The deposited ZnO films on the ZnO-coated seed surfaces are preferentially on the (0 0 2) plane and exhibit increased from several 10 nm to 150 nm with increasing seed layer grain size. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectThin filmsen_US
dc.subjectCrystal growthen_US
dc.subjectCrystal structureen_US
dc.titleHigh oriented ZnO films by sol-gel and chemical bath deposition combination methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2008.08.080en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume475en_US
dc.citation.issue1-2en_US
dc.citation.spageL46en_US
dc.citation.epageL49en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000265911700012-
dc.citation.woscount17-
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