完整後設資料紀錄
DC 欄位語言
dc.contributor.author劉昱賢en_US
dc.contributor.authorLiu, Yu-Sianen_US
dc.contributor.author溫瓌岸en_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2014-12-12T02:34:53Z-
dc.date.available2014-12-12T02:34:53Z-
dc.date.issued2012en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079911689en_US
dc.identifier.urihttp://hdl.handle.net/11536/72440-
dc.description.abstract本論文在標準 0.18 μm CMOS 電路製程下完成一具備 0g 校正之 CMOS/MEMS 加速度計單晶片設計。採用低雜訊截波穩定式架構與望遠鏡式放大器來達成低雜訊,輸出雜訊在 1KHz 為 26.85 μg/√Hz 。搭載數位校正電路以補償感測器介面電路端之偏移,最大可補償 21 fF 之偏移。模擬結果顯示系統具靈敏度為 452.1 mV/g ,功率消耗約為 1.16 mW 。zh_TW
dc.description.abstractA monolithic accelerometer design with zero-g calibration in standard 0.18 μm CMOS mixed signal ASIC process is presented. The low noise chopper architecture and telescopic topology are adopted to achieve low noise. The output noise is 26.85 μg/√Hz at 1KHz. On-chip digital offset calibration enables compensation of random offset in the sensor interface. The maximum 21 fF capacitance mismatch can be calibrated. The simulation results show that the whole system have 452.1 mV/g sensitivity. The power consumption is about 1.16 mW.en_US
dc.language.isoen_USen_US
dc.subject零g校正zh_TW
dc.subject加速度計zh_TW
dc.subject讀出電路zh_TW
dc.subject電容讀出電路zh_TW
dc.subject偏移校正zh_TW
dc.subjectZero-g Calibrationen_US
dc.subjectAccelerometeren_US
dc.subjectReadout Circuiten_US
dc.subjectCapacitive Readouten_US
dc.subjectOffset Calibrationen_US
dc.title具備 0g 校正之 CMOS/MEMS 加速度計單晶片設計zh_TW
dc.titleCMOS/MEMS Accelerometer Readout with Zero-g Calibrationen_US
dc.typeThesisen_US
dc.contributor.department電子工程學系 電子研究所zh_TW
顯示於類別:畢業論文