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dc.contributor.authorWu, J. Y.en_US
dc.contributor.authorChiu, Y. H.en_US
dc.contributor.authorLien, J. Y.en_US
dc.contributor.authorLin, M. F.en_US
dc.date.accessioned2014-12-08T15:09:30Z-
dc.date.available2014-12-08T15:09:30Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2009.042en_US
dc.identifier.urihttp://hdl.handle.net/11536/7250-
dc.description.abstractThe low-energy magnetoelectronic structures of nanographene ribbons under a modulated magnetic field are investigated by the Peierls tight-binding model. They are dominated by the field strength, period, phase, the ribbon width, and edge structure. The modulated magnetic field could add state degeneracy, modify energy dispersions, alter subband spacings, affect carrier-density distributions, create additional band-edge states, and cause semiconductor-metal transitions. The main features of energy bands are directly reflected in density of states, such as the position, height, structure, and number of the prominent peaks. These results immensely differ from those in a uniform magnetic field. Significant differences between a 1D graphene ribbon and a 2D electron gas are also found.en_US
dc.language.isoen_USen_US
dc.subjectNanographene Ribbonen_US
dc.subjectA Modulated Magnetic Fielden_US
dc.titleThe Effects of the Modulated Magnetic Fields on Electronic Structures of Graphene Nanoribbonsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2009.042en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue5en_US
dc.citation.spage3193en_US
dc.citation.epage3200en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000265186800058-
dc.citation.woscount4-
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