氮化鎵電性特性量測及元件均勻性篩選

Abstract

本研究首先設計電路量測MOSFET及EPC2010電性特性，包含電流-電壓曲線、寄生電容、臨限電壓、崩潰電壓以及體二極體等，確認結果與datasheet吻合後，以相同原理量測交通大學製程之氮化鎵元件，目前單顆80mm晶體導通電組僅0.26Ω且最大電流15A以上，關閉時耐壓可達300V。再者，利用光偶合隔離獨立電源式之上橋電路進行閘極端對地端電壓之量測，發現氮化鎵元件關閉時漏電流遠大於MOSFETs元件，同時推得EPC2010的關閉電阻值均大於1MΩ，而交通大學的氮化鎵僅有約100kΩ，並可透過此量測電路篩選出電性特性較為接近以及無法正常開關切換之元件。最後，建立元件以及量測電路之等效電路模型，將各元件量測數據代入模擬軟體後模擬出實際量測波形。

In this study, designing the circuit to measurement electrical charateristics of EPC2010 and MOSFET in priority, including ID-VD curve, parasitic capacitance, threshold voltage, breakdown voltage, and body diode, etc. When the results matches the datasheet, measure the GaN of NCTU. The on-resistance value is 0.26Ω and the maximum current value is 15A or more while the GaN is turned on, and there is 300V of the breakdown voltage while it is turned off. By measuring the voltage of gate to ground on the high-side bridge circuit, the leakage current of GaN is much larger than MOSFET when the devices are turned off, and the off-resistance values of EPC2010 are greater than 1MΩ, while only about 100kΩ for NCTU’s GaN. By this circuit, select the components which have similar electrical characteristics. Finally, establishing the element and measurement circuit equivalent model for the components measured data into the simulation software to simulate the actual waves.