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dc.contributor.authorLiu, Yu-Shenen_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2019-04-03T06:42:22Z-
dc.date.available2019-04-03T06:42:22Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.79.193101en_US
dc.identifier.urihttp://hdl.handle.net/11536/7259-
dc.description.abstractA first-principles approach is presented for the thermoelectricity in molecular junctions formed by a single molecule contact. The study investigates the Seebeck coefficient considering the source-drain electrodes with distinct temperatures and chemical potentials in a three-terminal geometry junction. We compare the Seebeck coefficient in the amino-substituted and unsubstituted butanethiol junctions and observe interesting thermoelectric properties in the amino-substituted junction. Due to the novel states around the Fermi levels introduced by the amino substitution, the Seebeck coefficient could be easily modulated by using gate voltages and biases. When the temperature in one of the electrodes is fixed, the Seebeck coefficient varies significantly with the temperature in the other electrode and such dependence could be modulated by varying the gate voltages. As the biases increase, richer features in the Seebeck coefficient are observed, which are closely related to the transmission functions in the vicinity of the left and right Fermi levels.en_US
dc.language.isoen_USen_US
dc.subjectab initio calculationsen_US
dc.subjectFermi levelen_US
dc.subjectmolecular electronicsen_US
dc.subjectSeebeck effecten_US
dc.titleSeebeck coefficient of thermoelectric molecular junctions: First-principles calculationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.79.193101en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume79en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000266501300001en_US
dc.citation.woscount53en_US
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