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dc.contributor.authorLiang, Cheng-Hsienen_US
dc.contributor.authorChen, Chin-Hsiungen_US
dc.contributor.authorChang, Chi-Yangen_US
dc.date.accessioned2014-12-08T15:09:31Z-
dc.date.available2014-12-08T15:09:31Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2009.2017345en_US
dc.identifier.urihttp://hdl.handle.net/11536/7263-
dc.description.abstractThe etching error causes serious frequency drift of a microstrip stepped-impedance resonator (SIR). This paper proposes a novel microstrip quarter-wave SIR structure, which is insensitive to fabrication tolerances. Inserting several ground strips in the low-impedance section of the resonator keeps the impedance ratio almost constant in spite of inaccurate fabrication. As an additional benefit, the resonator size would be miniaturized because the characteristic impedance of the microstrip line in the low-impedance section is mainly controlled by the signal strips and the inserted ground strips in a coplanar manner. The concepts and characteristics of this modified resonator structure are discussed in detail. The filters constructed by the conventional microstrip SIR were also designed and fabricated at the same frequency band to compare with the proposed ones. Measured results show that each proposed filter has compact size, wide stopband, and high tolerance to fabrication errors. Two four-pole cross-coupled filters were designed and fabricated to demonstrate the feasibility.en_US
dc.language.isoen_USen_US
dc.subjectCross-coupled filteren_US
dc.subjectfabrication toleranceen_US
dc.subjectground stripen_US
dc.subjectspurious responseen_US
dc.subjectstepped-impedance resonator (SIR)en_US
dc.subjecttransmission zeroen_US
dc.titleFabrication-Tolerant Microstrip Quarter-Wave Stepped-Impedance Resonator Filteren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2009.2017345en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume57en_US
dc.citation.issue5en_US
dc.citation.spage1163en_US
dc.citation.epage1172en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000266040900017-
dc.citation.woscount8-
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