利用X光反射量測研究IGZO-TFTs 的O2流量對電性的影響

Abstract

目前行動電子元件當道，高性能的運算元件以及華麗精緻的顯示需求對螢幕性能的要求更是愈趨嚴苛。我們需要運作速度快的元件來應付畫面快速切換的需求，可是我們又希望在畫素增加、電晶體數量亦持續增加的情況下使得耗電維持甚至是加以降低。在以增速、降能耗的訴求下本論文選擇了使用IGZO這樣的材料來應用在元件上以期滿足對元件的要求。 本論文探討IGZO 這個材料對IGZO的不同成長參數以及不同退火溫度對元件特性有何影響，首先我們改變製程中通氧的流量來觀察電性與製程中氧流量的關係再利用X光反射量測加上XPS的分析一同觀察在電性改變的同時物性是哪個部分也有相應的變化，緊接著將元件以不同退火溫度後所測得的電性來決定最佳的氧流量以及退火溫度來製作出元件。透過這樣的分析不但可以更清楚的了解元件運作原理更可以藉此最佳化製程甚至是元件結構來達成優異的元件特性。

IGZO (Indium Gallium Zinc Oxide) panel is a promising candidate for advanced display in next generation mobile electronic devices. IGZO panel can potentially achieve significant improvement in resolution and energy efficiency as compared to conventional LCDs. In order to realize IGZO-TFTs for future display technology, it is essential to better understand the effects of various process parameters during IGZO growth on its physical properties, as well as the correlation between IGZO film properties and the corresponding transistor electrical properties. This present work studies the effects of oxygen flow and annealing temperature during IGZO deposition on the electrical device properties of IGZO-TFTs. X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) are utilized to characterize IGZO film grown under various process conditions. Correlation has been drawn between physical properties of IGZO film and the corresponding electrical properties to guide future optimization.